SRAM Memory Design

Position Summary

Position: SRAM Memory Design Engineer:

Roles and Responsibilities:

• Design highly competitive circuits to meet performance/power specifications requested by customers
• Guide and lead a group of engineers to deliver the SRAM IP in the given timelines
• Analyse circuits and identify potential robustness gaps and find solutions to improve robustness of the design.
• Own the responsibility from SPEC to GDS and DK delivery.
• Review circuits, robustness reports and identify potential robustness issues.
• Review Layouts and suggest improvement areas to achieve competitive PPA
• Understanding of SRAM PPA trade-offs and identify right techniques to meet SPEC
• Must be able to communicate effectively across different teams.

Role and Responsibilities

Skills & Experience:

• Master/Bachelor in electronics

• Working experience in preferably Memory design

• Understanding of RC network and FINFET fundamentals are necessary.

• Custom or Compiler SRAM/ROM development experience

• Fundamentals of process variability and its effect on memory design

• Thorough understanding of SRAM bit cell and its characteristics (Read current, Standby current, data retention, SNM)

• Strong understanding of circuit design fundamentals

• Critical path modelling concept, various type of models ( RC, C, Pai,ladder)

• Good knowledge of semiconductor physics. Like knowledge of finfet function, parasitic etc

• Analysing layout and understanding of LLE effects.

Skills and Qualifications

Experience – 4 to 10 Years of experience

Qualifications: B.Tech/B.E/M.Tech/M.E

Disclaimer: Samsung Semiconductor India Research (SSIR), a division of Samsung R&D India - Bangalore Pvt. Ltd is dedicated to employing a diverse workforce and providing Equal Employment Opportunity to all individuals, regardless of their religion, gender, age, marital status, gender identity, status as a protected veteran, genetic information, status as a qualified individual with a disability, or any other characteristic protected by law

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